Temperature sensitivity and noise of Josephson detector on bicrystal sapphire substrates at 77 K

Citation for the published paper: Tarasov, M. ; Stepantsov, E. ; Kalaboukhov, A. (2007) "Temperature sensitivity and noise of Josephson detector on bicrystal sapphire substrates at 77 K". JETP Letters, vol. 86(11), http://d

Superconducting weak bonds at grain boundaries in MgB2

The possibility of preparing bicrystalline Josephson junctions and bolometers based on superconducting MgB2 on specially prepared bicrystalline MgO substrates is investigated. Microbridges 0.85–6.00 μm in width, intersecting the bicrystalline interface, are formed in epitaxial bicrystalline MgB2 films grown on these substrates. It is found that annealing of bicrystalline samples in oxygen leads to a systematic decrease in the critical current, an increase in the temperature width of the superconducting transition region, and to an improvement of the current-voltage (IV) characteristic, which becomes close in shape to the IV characteristic of a Josephson junction. The response of such a junction to radiation at a frequency of 110 GHz with an amplitude attaining 0.5 mV is measured

Grazing-angle reflectivity setup for the low-temperature infrared spectroscopy of two-dimensional systems

A new optical setup is described that allows the reflectivity at grazing incidence to be measured, including ultrathin films and two-dimensional electron systems (2DES) down to liquid-helium temperatures, by exploiting the Berreman effect and the high brilliance of infrared synchrotron radiation. This apparatus is well adapted to detect the absorption of a 2DES of nanometric thickness, namely that which forms spontaneously at the interface between a thin film of LaAlO3 and its SrTiO3 substrate, and to determine its Drude parameters

Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer

We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n = hf/kT = 160 at f = 350 GHz T = 0.1 K, and current responsivity dI/dP = e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n = 1 and responsivity dI/dP = e/hf. In experiments, we approach intrinsic quantum efficiency up to n = 80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes

Magnetism and Ion Diffusion in Honeycomb Layered Oxide K2_2Ni2_2TeO6_6: First Time Study by Muon Spin Rotation & Neutron Scattering

In the quest of finding novel and efficient batteries, a great interest has raised in K-based honeycomb layer oxide materials both for their fundamental properties and potential applications. A key issue in the realization of efficient batteries based on such compounds, is to understand the K-ion diffusion mechanism. However, investigation of potassium-ion (K$^+$) dynamics in materials using magneto-spin properties has so far been challenging, due to its inherently weak nuclear magnetic moment, in contrast to other alkali ions such as lithium and sodium. Spin-polarised muons, having a high gyromagnetic ratio, make the muon spin rotation and relaxation ($\mu$+SR) technique ideal for probing ions dynamics in weak magneto-spin moment materials. Here we report the magnetic properties and K+ dynamics in honeycomb layered oxide material of the K$_2$Ni$_2$TeO$_6$ using $\mu$+SR measurements. Our low-temperature $\mu$+SR results together with, with complementary magnetic susceptibility, find an antiferromagnetic transition at 26 K. Further $\mu$+SR studies performed at higher temperatures reveal that potassium ions (K$^+$) become mobile above 250 K and the activation energy for the diffusion process is Ea = 121(13) meV. This is the first time that K+ dynamics in potassium-based battery materials has been measured using $\mu$+SR. Finally our results also indicate an interesting possibility that K-ion self diffusion occurs predominantly at the surface of the powder particles. This opens future possibilities for improving ion diffusion and device performance using nano-structuring.Comment: 12 pages, 12 figure

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

We examine the application of Josephson radiation emitters to spectral calibration of single-photon-resolving detectors. Josephson junctions are patterned in a YBCO film on a bicrystal sapphire substrate and are voltage controlled to generate radiation in the frequency range of 0.05-1 THz. The detector used in this work consists of a gate-defined quantum-dot photon-to-charge transducer coupled to a single-electron transistor. Both the emitter and the detector are equipped with a matching on-chip wide-band antenna. The combination of a tuneable emitter and detector allows us to determine the efficacy of the YBCO emitter and also to analyze the elementary processes involved in the detection

Quantum Resistance Standard Based on Epitaxial Graphene

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.Comment: Submitte

Towards Oxide Electronics:a Roadmap

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics

Arrays of sub‐terahertz cryogenic metamaterial

Integrated quasi‐optical cryogenic terahertz receivers contain arrays of detectors, quasi‐optical filters, interferometers, and other metamaterials. Matrices of quasi‐optical band‐pass, low‐pass, and high‐pass filters, Fabry–Perot grid interferometers, and arrays of half‐wave and electrically small antennas with superconductor‐insulator‐normal metal‐insulator‐superconductor (SINIS) sub‐terahertz wavelength range detectors were fabricated and experimentally studied on the same computational, technological, and experimental platform. For the design of the filters, we used the periodic frequency‐selective surfaces (FSS) approach, contrary to detector arrays that can be presented in a model of distributed absorbers. The structures were fabricated using direct electron bSeam lithography, thermal shadow evaporation, lift‐off, alternatively magnetron sputtering, and chemical and plasma etching. The numerical simulation methods of such structures are sufficiently different: for the reactive matrices with low losses, the approximation of an infinite structure with periodic boundary conditions is applicable, and for the arrays of detectors with dissipative elements of absorbers, a complete analysis of the finite structure with hundreds of interacting ports is applicable. The difference is determined by the presence of dissipation in the detector arrays, the phase of the reflected or re‐emitted signal turned out to be undefined and the Floquet periodic boundary conditions are correct only for a phased array antenna. The spectral characteristics of the created filters, interferometers, and antenna arrays were measured in the frequency range 50–600 GHz